Material System

Element or Compound

Name

Crystal Structure1

Lattice Constant (A) at 300 K

Band Gap (ev)
at 300 K

Band2

IV

C

Carbon (diamond)

D

3.56683

5.47

I

 

Ge

Germanium

D

5.64613

0.66

I

 

Si

Silicon

D

5.43095

1.12

I

 

Sn

Grey Tin

D

6.48920

0.00

D

IV-IV

SiC

Silicon carbide

W

a = 3.086, c = 15.117

2.996

I

III-V

AlAs

Aluminum arsenide

Z

5.6605

2.16

I

 

AlP

Aluminum phosphide

Z

5.4510

2.45

 
 

AlSb

Aluminum antimonide

Z

6.1355

1.58

I

 

BN

Boron nitride

Z

3.6150

~7.5

I

 

BP

Boron phosphide

Z

4.5380

2.0

 
 

GaAs

Gallium arsenide

Z

5.6533

1.42

D

 

GaN

Gallium nitride

W

a = 3.189, c = 5.185

3.36

 
 

GaP

Gallium phosphide

Z

5.4512

2.26

I

 

GaSb

Gallium antimonide

Z

6.0959

0.72

D

 

InAs

Indium arsenide

Z

6.0584

0.36

D

 

InP

Indium phosphide

Z

5.8686

1.35

D

 

InSb

Indium antimonide

Z

6.4794

0.17

D

II-VI

CdS

Cadmium sulfide

Z

5.8320

2.42

D

 

CdS

Cadmium sulfide

W

a = 4.16, c = 6.756

2.42

D

 

CdSe

Cadmium selenide

Z

6.050

1.70

D

 

CdTe

Cadmium telluride

Z

6.482

1.56

D

 

ZnO

Zinc oxide

R

4.580

3.35

D

 

ZnS

Zinc sulfide

Z

5.420

3.68

D

 

ZnS

Zinc sulfide

W

a = 3.82, c = 6.26

3.68

D

 

ZnSe

Zinc selenide

Z

5.668

2.71

D

 

ZnTe

Zinc telluride

Z

6.103

2.393

D

IV-VI

PbS

Lead sulfide

R

5.9362

0.41

I

 

PbSe

Lead selenide

R

6.126

0.27

I

 

PbTe

Lead telluride

R

6.4620

0.31

I

1. D = Diamond, W = Wurzite, Z = Zincblende, R = Rock Salt
2. I = Indirect, D = Direct
3. At ~ 2K.

Source: Sze, S.M., Physics of Semiconductor Devices, New York, Wiley Interscience Publication, 1981, pp. 848-849.